3CA1129 Specs and Replacement
Type Designator: 3CA1129
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
3CA1129 Substitution
- BJT ⓘ Cross-Reference Search
3CA1129 datasheet
2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute ... See More ⇒
2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications , 2SD1760(3DA1760) Features Low V complements the 2SD1760(3DA1760). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO ... See More ⇒
2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR /Purpose Power amplifier applications. V 2SD1762(3DA1762) CE(sat) Features Low V ,complementary pair with 2SD1762(3DA1762). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO ... See More ⇒
TIP117(3CA117) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP112(3DA112) Features Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO ... See More ⇒
Detailed specifications: 3CA5782, 3CA5783, ALJ13002, ALJ13003, 3CA034, 3CA1011, 3CA1012, 3CA1072, S9014, 3CA117, 3CA1184, 3CA1185, 3CA1203, 3CA1204, 3CA1217, 3CA1225, 3CA1237
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