3CA1129 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CA1129
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
3CA1129 Transistor Equivalent Substitute - Cross-Reference Search
3CA1129 Datasheet (PDF)
2sa1129 3ca1129.pdf
2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR : Purpose: For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features: Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute
2sb1184 3ca1184.pdf
2SB1184(3CA1184) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications :, 2SD1760(3DA1760) Features: Low V complements the 2SD1760(3DA1760). CE(sat),/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO
2sb1185 3ca1185.pdf
2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. :V 2SD1762(3DA1762) CE(sat)Features: Low V ,complementary pair with 2SD1762(3DA1762). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -50 V CEO
tip117 3ca117.pdf
TIP117(3CA117) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power linear switching applications. : TIP112(3DA112) Features: Complement to TIP112(3DA112). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2352
