All Transistors. 2N6562 Datasheet

 

2N6562 Datasheet and Replacement


   Type Designator: 2N6562
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

 2N6562 Substitution

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2N6562 Datasheet (PDF)

 9.1. Size:298K  rca
 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf pdf_icon

2N6562

 9.2. Size:144K  mospec
 2n6569.pdf pdf_icon

2N6562

AAA

 9.3. Size:11K  semelab
 2n6560.pdf pdf_icon

2N6562

2N6560Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:12K  semelab
 2n6561.pdf pdf_icon

2N6562

2N6561Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

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Datasheet: 2N6555 , 2N6556 , 2N6557 , 2N6558 , 2N6559 , 2N656 , 2N6560 , 2N6561 , BC558 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , 2N656S , 2N657 , 2N6570 .

History: E1B | M54561P | CD13001 | 2SD401A | BC109AP | E20079 | 2N674

Keywords - 2N6562 transistor datasheet

 2N6562 cross reference
 2N6562 equivalent finder
 2N6562 lookup
 2N6562 substitution
 2N6562 replacement

 

 
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