2N656S Datasheet and Replacement
Type Designator: 2N656S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N656S Transistor Equivalent Substitute - Cross-Reference Search
2N656S Datasheet (PDF)
2n6560.pdf
2N6560 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
2n6561.pdf
2N6561 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
Datasheet: 2N6560 , 2N6561 , 2N6562 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , TIP42 , 2N657 , 2N6570 , 2N6571 , 2N6572 , 2N6573 , 2N6574 , 2N6575 , 2N6576 .
History: 2SD1912S | 2SB760A | 2SB748 | KC808 | 2SC1775 | 2SD1918 | EC3H07BA
Keywords - 2N656S transistor datasheet
2N656S cross reference
2N656S equivalent finder
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History: 2SD1912S | 2SB760A | 2SB748 | KC808 | 2SC1775 | 2SD1918 | EC3H07BA
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