All Transistors. 2N656S Datasheet

 

2N656S Datasheet and Replacement


   Type Designator: 2N656S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5

 2N656S Transistor Equivalent Substitute - Cross-Reference Search

   

2N656S Datasheet (PDF)

 9.2. Size:144K  mospec
2n6569.pdf pdf_icon

2N656S

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 9.3. Size:11K  semelab
2n6560.pdf pdf_icon

2N656S

2N6560 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.4. Size:12K  semelab
2n6561.pdf pdf_icon

2N656S

2N6561 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

Datasheet: 2N6560 , 2N6561 , 2N6562 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , TIP42 , 2N657 , 2N6570 , 2N6571 , 2N6572 , 2N6573 , 2N6574 , 2N6575 , 2N6576 .

History: 2SD1912S | 2SB760A | 2SB748 | KC808 | 2SC1775 | 2SD1918 | EC3H07BA

Keywords - 2N656S transistor datasheet

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