SBU13003BD Datasheet, Equivalent, Cross Reference Search
Type Designator: SBU13003BD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO251
SBU13003BD Transistor Equivalent Substitute - Cross-Reference Search
SBU13003BD Datasheet (PDF)
..1. Size:162K winsemi
sbu13003bd.pdf
sbu13003bd.pdf
SBU13003BDHigh Voltage Fast-Switching NPN Power TransistorFeatures symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
