All Transistors. LB120A Datasheet

 

LB120A Datasheet and Replacement


   Type Designator: LB120A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
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LB120A Datasheet (PDF)

 ..1. Size:206K  dc components
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LB120A

DC COMPONENTS CO., LTD.LB120ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTORDescriptionDesigned for use in high-voltage switchingapplications.TO-92Pinning1 = Emitter2 = Collector .190(4.83).170(4.33)3 = Base2oTyp.190(4.83).170(4.33)Absolute Maximum Ratings(TA=25oC)2oTypCharacteristic Symbol Rating Unit.500Min(

 0.1. Size:45K  hsmc
 hlb120a.pdf pdf_icon

LB120A

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 0.2. Size:131K  cystek
 lb120a3.pdf pdf_icon

LB120A

Spec. No. : C618A3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : Page No. : 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | 2N2872 | 2SA1262 | CSC1162 | T11 | NB221YX

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