STD01N Datasheet, Equivalent, Cross Reference Search
Type Designator: STD01N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO3P-5PIN MT100
STD01N Transistor Equivalent Substitute - Cross-Reference Search
STD01N Datasheet (PDF)
std01n std01p.pdf
STD01N and STD01PDarlington Transistors for Audio AmplifiersFeatures and Benefits Description Built-in temperature compensation diodes The STD01N and STD01P are enhanced Darlington transistors High power (100 W) handling in a small package with built-in drivers and temperature compensation diode. (TO-3P), for minimized heat sink requirements Manufactured using the unique Sanken
std01n p.pdf
STD01N and STD01PDarlington Transistors for Audio AmplifiersFeatures and Benefits Description Built-in temperature compensation diodes The STD01N and STD01P are enhanced Darlington transistors High power (100 W) handling in a small package with built-in drivers and temperature compensation diode. (TO-3P), for minimized heat sink requirements Manufactured using the unique Sanken
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
