STD01P Datasheet, Equivalent, Cross Reference Search
Type Designator: STD01P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Noise Figure, dB: -
Package: TO3P-5PIN MT100
STD01P Transistor Equivalent Substitute - Cross-Reference Search
STD01P Datasheet (PDF)
std01n std01p.pdf
STD01N and STD01PDarlington Transistors for Audio AmplifiersFeatures and Benefits Description Built-in temperature compensation diodes The STD01N and STD01P are enhanced Darlington transistors High power (100 W) handling in a small package with built-in drivers and temperature compensation diode. (TO-3P), for minimized heat sink requirements Manufactured using the unique Sanken
std01n p.pdf
STD01N and STD01PDarlington Transistors for Audio AmplifiersFeatures and Benefits Description Built-in temperature compensation diodes The STD01N and STD01P are enhanced Darlington transistors High power (100 W) handling in a small package with built-in drivers and temperature compensation diode. (TO-3P), for minimized heat sink requirements Manufactured using the unique Sanken
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
