3DA27 Specs and Replacement
Type Designator: 3DA27
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DA27 Substitution
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3DA27 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a... See More ⇒
isc Silicon NPN Power Transistor 3DA27C DESCRIPTION With TO-3 High DC Current Gain- h >10@I = 1.5A FE C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Detailed specifications: RN2204, RN2205, RN2206, 3DA1360, 3DA1360A, 3DA1383, 3DA1384, 3DA14, D882P, 3DA28, 3DA142T, 3DA3788, 3DA3790, 3DA3807, 3DA3834, 3DA3834F, 3DA3852R
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History: NTE18 | 3DA2073 | PT236T30E2H | 3DA3421 | 2SC1996 | 2SD1147 | 2STA2120
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