3DA30G Specs and Replacement
Type Designator: 3DA30G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
3DA30G Substitution
- BJT ⓘ Cross-Reference Search
3DA30G datasheet
3DA30 NPN A B C D E F G PCM Tc=25 30 W ICM 3 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=1mA 25 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 25 50 100 150 300 250 300 V ICEO VCE=20V 1 mA IC=1.5A VCEsat 0.8 V IB=0.3A ... See More ⇒
2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR Purpose Video output amplifier. , Features High V , low C . CEO ob /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA ... See More ⇒
Detailed specifications: 3DA2688, 3DA2983, 3DA30A, 3DA30B, 3DA30C, 3DA30D, 3DA30E, 3DA30F, TIP41, 3DA3063, 3DA5147, 3DA5192, 3DA5200A, 3DA5200B, 3DA5200C, 3DA5371, 3DA001A
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