3DA5200B Specs and Replacement
Type Designator: 3DA5200B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3P
3DA5200B Substitution
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3DA5200B datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200B TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO 3P 3DA5200C TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage High Current and Power Capacity 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120... See More ⇒
Detailed specifications: 3DA30D, 3DA30E, 3DA30F, 3DA30G, 3DA3063, 3DA5147, 3DA5192, 3DA5200A, TIP122, 3DA5200C, 3DA5371, 3DA001A, 3DA001B, 3DA030A, 3DA030B, 3DA030C, 3DA030D
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