3DA150E Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA150E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA150E Transistor Equivalent Substitute - Cross-Reference Search
3DA150E Datasheet (PDF)
3da150.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA150NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
2sc1573-a 3da1573-a.pdf
2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier and video frequency output in small screen TV. :,f , 2SA879(3CA879) TFeatures: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T/Absolute maximum rati
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUL45D2 | KSA1241Y | CZ581 | BC257A
History: BUL45D2 | KSA1241Y | CZ581 | BC257A
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