3DA314 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA314
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SOT123
3DA314 Transistor Equivalent Substitute - Cross-Reference Search
3DA314 Datasheet (PDF)
3da3150 c3150.pdf
3DA3150(C3150) NPN PCM TC=25 50 W ICM 3.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB1mA 900 V V(BR)CEO ICE5mA 800 V V(BR)EBO IEB1mA 7.0 V ICBO VCE=800V 10 A IEBO VEB=5V 10 A VBEsat 1.5 IC=1.5A V IB=0.3A VCEsat 2.0 VC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HJ772 | CD1602 | 2SC5344U | 2SC5294 | C5T918 | AD103VI | HS5815
History: HJ772 | CD1602 | 2SC5344U | 2SC5294 | C5T918 | AD103VI | HS5815
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050