3DA325
Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA325
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.75
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 35
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 8
MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO276AB
TO220
TO257
3DA325
Transistor Equivalent Substitute - Cross-Reference Search
3DA325
Datasheet (PDF)
..1. Size:146K china
3da325 2sd325.pdf
3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55~150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB
9.1. Size:214K foshan
2sc3279 3da3279.pdf
2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier applications. : Features: High DC current gain and excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25) Symbol
9.2. Size:283K foshan
ktc3209 3da3209.pdf
KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)
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