All Transistors. 3DA8B Datasheet

 

3DA8B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DA8B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB

 3DA8B Transistor Equivalent Substitute - Cross-Reference Search

   

3DA8B Datasheet (PDF)

 ..1. Size:134K  china
 3da8a 3da8b 3da8c 3da8d 3da8e.pdf

3DA8B

3DA8 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=15mA 120 150 180 200 250 V V(BR)CEO ICE=15mA 80 120 150 180 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=30V 1.0 mA ICEO VCE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top