All Transistors. 2N6584 Datasheet

 

2N6584 Datasheet and Replacement


   Type Designator: 2N6584
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3

 2N6584 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6584 Datasheet (PDF)

 ..1. Size:187K  inchange semiconductor
 2n6584.pdf pdf_icon

2N6584

isc Silicon NPN Power Transistor 2N6584 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s... See More ⇒

 9.1. Size:11K  semelab
 2n6583.pdf pdf_icon

2N6584

2N6583 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.2. Size:11K  semelab
 2n6581.pdf pdf_icon

2N6584

2N6581 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

 9.3. Size:187K  inchange semiconductor
 2n6583.pdf pdf_icon

2N6584

isc Silicon NPN Power Transistor 2N6583 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s... See More ⇒

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Datasheet: 2N6579 , 2N657A , 2N657S , 2N658 , 2N6580 , 2N6581 , 2N6582 , 2N6583 , 2SA1015 , 2N6585 , 2N6586 , 2N6587 , 2N6588 , 2N6589 , 2N659 , 2N6590 , 2N6591 .

History: 2N6574 | AC141H | DXT2907A | BFS98L | 2SA1228 | 2SC1777 | AC153Y

Keywords - 2N6584 transistor datasheet

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