3DA96B Datasheet. Specs and Replacement
Type Designator: 3DA96B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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3DA96B datasheet
3DA96 NPN A B C PCM TC 75 20 W ICM 2.5 A Tjm 175 Tstg -55 175 VCE=10V Rth 5.0 /W IC=0.5A V(BR)CEO ICE=5mA 30 50 70 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=20V 2.0 mA IC=1.5A VCEsat 2.0 V IB=0.3A VCE=5V hFE 10 IC=0.75A VCE=5V ... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒
Detailed specifications: 3DA80B, 3DA80C, 3DA87A, 3DA87B, 3DA87C, 3DA87D, 3DA882, 3DA96A, BDT88, 3DA96C, 3DA3902, 3DA3942, 3DA4002, 3DA5A, 3DA5B, 3DA5C, 3DA5D
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