All Transistors. 3DA96B Datasheet

 

3DA96B Datasheet and Replacement


   Type Designator: 3DA96B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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3DA96B Datasheet (PDF)

 9.1. Size:107K  china
 3da96.pdf pdf_icon

3DA96B

3DA96 NPN A B C PCM TC75 20 W ICM 2.5 A Tjm 175 Tstg -55~175 VCE=10V Rth 5.0 /W IC=0.5A V(BR)CEO ICE=5mA 30 50 70 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=20V 2.0 mA IC=1.5A VCEsat 2.0 V IB=0.3A VCE=5V hFE 10 IC=0.75A VCE=5V

 9.2. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf pdf_icon

3DA96B

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC945-Y | 2N5552-2

Keywords - 3DA96B transistor datasheet

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