All Transistors. 3DA96B Datasheet

 

3DA96B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DA96B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 3DA96B Transistor Equivalent Substitute - Cross-Reference Search

   

3DA96B Datasheet (PDF)

 9.1. Size:107K  china
 3da96.pdf

3DA96B

3DA96 NPN A B C PCM TC75 20 W ICM 2.5 A Tjm 175 Tstg -55~175 VCE=10V Rth 5.0 /W IC=0.5A V(BR)CEO ICE=5mA 30 50 70 V V(BR)EBO IEB=5mA 5.0 V ICEO VCE=20V 2.0 mA IC=1.5A VCEsat 2.0 V IB=0.3A VCE=5V hFE 10 IC=0.75A VCE=5V

 9.2. Size:31K  shaanxi
 3da76 3da10a 3da96.pdf

3DA96B

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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