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3DA50B PDF Specs and Replacement


   Type Designator: 3DA50B
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DA50B PDF detailed specifications

 9.1. Size:105K  china
 3da5038.pdf pdf_icon

3DA50B

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 9.2. Size:25K  shaanxi
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3DA50B

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Detailed specifications: 3DA5A , 3DA5B , 3DA5C , 3DA5D , 3DA5E , 3DA5F , 3DA5G , 3DA50A , BC548 , 3DA50C , 3DA50D , 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 .

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