3DA50D Specs and Replacement
Type Designator: 3DA50D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA50D Substitution
3DA50D detailed specifications
3da50.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒
Detailed specifications: 3DA5C , 3DA5D , 3DA5E , 3DA5F , 3DA5G , 3DA50A , 3DA50B , 3DA50C , C5198 , 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , 3DA58B .
History: 3DA50G
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