3DA50D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA50D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA50D Transistor Equivalent Substitute - Cross-Reference Search
3DA50D Datasheet (PDF)
3da5038.pdf
3DA5038 NPN PCM TC=25 140 W ICM 20 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=10mA 150 V V(BR)CEO ICE=10mA 150 V V(BR)EBO IEB=10mA 5 V ICBO VCB=Vcbo 1.0 mA ICEO VEB=0.5VCEO 1.0 mA IC=10A VCEsat 1.5 IB=2A VCE=5V hFE 55~80 IC=10A
3da50.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
