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3DA58B Specs and Replacement


   Type Designator: 3DA58B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
 

 3DA58B Substitution

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3DA58B detailed specifications

 9.1. Size:146K  china
 3da58.pdf pdf_icon

3DA58B

3DA58 NPN A B C D E PCM TC=25 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.0 /W IC=1A V(BR)CBO ICB=5mA 300 400 600 800 1000 V V(BR)CEO ICE=5mA 200 300 300 400 500 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=100V 0.1 mA ICEO VCE=... See More ⇒

Detailed specifications: 3DA50D , 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , TIP3055 , 3DA58C , 3DA58D , 3DA58E , 3DA608A , 3DA608B , 3DA608C , 3DA608D , 3DA608E .

History: MPSW45AG

Keywords - 3DA58B transistor specs

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 3DA58B equivalent finder
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