3DA58E Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA58E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DA58E Transistor Equivalent Substitute - Cross-Reference Search
3DA58E Datasheet (PDF)
9.1. Size:146K china
3da58.pdf
3da58.pdf
3DA58 NPN A B C D E PCM TC=25 50 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 3.0 /W IC=1A V(BR)CBO ICB=5mA 300 400 600 800 1000 V V(BR)CEO ICE=5mA 200 300 300 400 500 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=100V 0.1 mA ICEO VCE=
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
