3DA608D Datasheet. Specs and Replacement

Type Designator: 3DA608D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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3DA608D datasheet

 8.1. Size:112K  china

 3da608.pdf pdf_icon

3DA608D

3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.... See More ⇒

 8.2. Size:242K  inchange semiconductor

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3DA608D

isc Silicon NPN Power Transistor 3DA608 DESCRIPTION High DC Current Gain- h 20-180@I = 7.5A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 3DA608A 40 ... See More ⇒

Detailed specifications: 3DA58A, 3DA58B, 3DA58C, 3DA58D, 3DA58E, 3DA608A, 3DA608B, 3DA608C, TIP31C, 3DA608E, 3DA608F, 3DA6718, 3DA75A, 3DA75B, 3DA75C, 3DA75D, 3DA75E

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