3DA608E Specs and Replacement
Type Designator: 3DA608E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
3DA608E Transistor Equivalent Substitute - Cross-Reference Search
3DA608E detailed specifications
3da608.pdf
3DA608 NPN A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 30 50 80 100 150 200 V V(BR)EBO IEB=5mA 4.0 V VCE=10V VCE=20V VCE=30V ICEO 2.0 mA VCE=40V VCE=60V VCE=80V IC=5.0A VCEsat 1.0 V IB=0.5A VCE=3.... See More ⇒
3da608.pdf
isc Silicon NPN Power Transistor 3DA608 DESCRIPTION High DC Current Gain- h 20-180@I = 7.5A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 3DA608A 40 ... See More ⇒
Detailed specifications: 3DA58B , 3DA58C , 3DA58D , 3DA58E , 3DA608A , 3DA608B , 3DA608C , 3DA608D , 2N2222A , 3DA608F , 3DA6718 , 3DA75A , 3DA75B , 3DA75C , 3DA75D , 3DA75E , 3DA75F .
History: 3DA608D | UN5110 | 3DA608A | TR-21C
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