All Transistors. 3DA75A Datasheet

 

3DA75A Datasheet and Replacement


   Type Designator: 3DA75A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DA75A Datasheet (PDF)

 9.1. Size:186K  lge
 3da752.pdf pdf_icon

3DA75A

3DA752(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsTO-252-2LVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector power dissipation

 9.2. Size:25K  shaanxi
 3da75.pdf pdf_icon

3DA75A

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA75NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer

Datasheet: 3DA58E , 3DA608A , 3DA608B , 3DA608C , 3DA608D , 3DA608E , 3DA608F , 3DA6718 , A733 , 3DA75B , 3DA75C , 3DA75D , 3DA75E , 3DA75F , 3DA75G , 3DA752 , 2N6922 .

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