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3DA75A Specs and Replacement


   Type Designator: 3DA75A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 3DA75A Substitution

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3DA75A detailed specifications

 9.1. Size:186K  lge
 3da752.pdf pdf_icon

3DA75A

3DA752(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units TO-252-2L VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector power dissipation ... See More ⇒

 9.2. Size:25K  shaanxi
 3da75.pdf pdf_icon

3DA75A

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA75 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Detailed specifications: 3DA58E , 3DA608A , 3DA608B , 3DA608C , 3DA608D , 3DA608E , 3DA608F , 3DA6718 , 2SD1047 , 3DA75B , 3DA75C , 3DA75D , 3DA75E , 3DA75F , 3DA75G , 3DA752 , 2N6922 .

History: BC239

Keywords - 3DA75A transistor specs

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