3DA75A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA75A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA75A Transistor Equivalent Substitute - Cross-Reference Search
3DA75A Datasheet (PDF)
3da752.pdf
3DA752(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsTO-252-2LVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector power dissipation
3da75.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA75NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SD779 | 2SC941TMR | BSW53
