2N6588 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N6588 Specs and Replacement

Type Designator: 2N6588

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

2N6588 Substitution

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2N6588 datasheet

9.1. Size:11K semelab

2n6583.pdf pdf_icon

2N6583 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

9.2. Size:11K semelab

2n6581.pdf pdf_icon

2N6581 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

9.3. Size:187K inchange semiconductor

2n6583.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6583 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s... See More ⇒

9.4. Size:187K inchange semiconductor

2n6584.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6584 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s... See More ⇒