2N6588 Todos los transistores

 

2N6588 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6588
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 450 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Capacitancia de salida (Cc): 250 pF
   Ganancia de corriente contínua (hfe): 7
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2N6588

 

2N6588 Datasheet (PDF)

 9.1. Size:11K  semelab
 2n6583.pdf pdf_icon

2N6588

2N6583 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:11K  semelab
 2n6581.pdf pdf_icon

2N6588

2N6581 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:187K  inchange semiconductor
 2n6583.pdf pdf_icon

2N6588

isc Silicon NPN Power Transistor 2N6583 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s

 9.4. Size:187K  inchange semiconductor
 2n6584.pdf pdf_icon

2N6588

isc Silicon NPN Power Transistor 2N6584 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Current Capability Collector-Emitter Saturation Voltage- V )= 1.5 V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, s

MOSTRAR MÁS

Otros transistores... 2N6580 , 2N6581 , 2N6582 , 2N6583 , 2N6584 , 2N6585 , 2N6586 , 2N6587 , 2SC2383 , 2N6589 , 2N659 , 2N6590 , 2N6591 , 2N6592 , 2N6593 , 2N6594 , 2N6595 .

History: NST846BF3T5G | CHDTC115GKGP | NSP598 | NSE171 | NSS20601CF8T1G | 2SC4675 | IR4055

 

 
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