2N6338X Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6338X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 25 A
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2N6338X Transistor Equivalent Substitute - Cross-Reference Search
2N6338X Datasheet (PDF)
2n6338x.pdf
2N6338XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6338 2n6339 2n6340 2n6341.pdf
Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrialmilitary power amplifier and switching circuit2N6340applications. High CollectorEmitter Sustaining Voltage 2N6341*VCEO(sus) = 100 Vdc (Min) 2N6338VCEO(sus) = 120 Vdc (Min) 2N6339*Motorola Preferred De
2n6338 2n6341.pdf
2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc
2n6338 2n6339 2n6340 2n6341.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base
2n6338 2n6339 2n6340 2n6341.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli
2n6338 2n6339 2n6340 2n6341.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
