2N6338X Todos los transistores

 

2N6338X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6338X
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 25 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2N6338X

 

2N6338X Datasheet (PDF)

 ..1. Size:11K  semelab
2n6338x.pdf

2N6338X

2N6338XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 8.1. Size:155K  motorola
2n6338 2n6339 2n6340 2n6341.pdf

2N6338X 2N6338X

Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrialmilitary power amplifier and switching circuit2N6340applications. High CollectorEmitter Sustaining Voltage 2N6341*VCEO(sus) = 100 Vdc (Min) 2N6338VCEO(sus) = 120 Vdc (Min) 2N6339*Motorola Preferred De

 8.2. Size:190K  onsemi
2n6338 2n6341.pdf

2N6338X 2N6338X

2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc

 8.3. Size:128K  mospec
2n6338 2n6339 2n6340 2n6341.pdf

2N6338X 2N6338X

AAA

 8.4. Size:154K  jmnic
2n6338 2n6339 2n6340 2n6341.pdf

2N6338X 2N6338X

JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base

 8.5. Size:168K  cn sptech
2n6338 2n6339 2n6340 2n6341.pdf

2N6338X 2N6338X

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli

 8.6. Size:185K  inchange semiconductor
2n6338 2n6339 2n6340 2n6341.pdf

2N6338X 2N6338X

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BDW52C | BC370 | MPS5550R | 2SC2715O | MPS6515

 

 
Back to Top