2N6341X Datasheet and Replacement
Type Designator: 2N6341X
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Collector Current |Ic max|: 25 A
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
2N6341X Transistor Equivalent Substitute - Cross-Reference Search
2N6341X Datasheet (PDF)
2n6341x.pdf
2N6341X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in... See More ⇒
2n6338 2n6339 2n6340 2n6341.pdf
Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial military power amplifier and switching circuit 2N6340 applications. High Collector Emitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred De... See More ⇒
2n6338 2n6341.pdf
2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. High Collector-Emitter Sustaining Voltage - http //onsemi.com VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS = 12 (Min) @ IC = 25 Adc... See More ⇒
Datasheet: 2N6308T3 , 2N916CSM , 2N916DCSM , 2N918ADCSM , 2N918DCSM , 2N930UB , 2N6338X , 2N6340X , C3198 , 2N6385SMD05 , 2N6517M , 3CG6517M , 2N6546T1 , 2N6546T3 , 2N6547T1 , 2N6547T3 , 2N6933 .
History: 2SD1716 | 2SD634 | 2SD430
Keywords - 2N6341X transistor datasheet
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History: 2SD1716 | 2SD634 | 2SD430
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