All Transistors. 2N6676T3 Datasheet

 

2N6676T3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6676T3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO257AA

 2N6676T3 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6676T3 Datasheet (PDF)

 8.1. Size:137K  mospec
2n6676-78.pdf

2N6676T3
2N6676T3

AAA

 8.2. Size:916K  no
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf

2N6676T3
2N6676T3

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2

 8.3. Size:70K  microsemi
2n6676 2n6678 2n6691 2n6693.pdf

2N6676T3
2N6676T3

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE

 8.4. Size:174K  aeroflex
2n6676 2n6678.pdf

2N6676T3
2N6676T3

NPN High Power Silicon Transistors2N6676 & 2N6678Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6676 2N6678 UnitsCollector - Emitter Voltage VCEO 300 400 VdcCollector - Base Voltage VCBO 450 650 VdcCollector - Base Voltage VCBX 450 650 VdcEmitter - Base Voltage VEBO 8.0 VdcBase Current IB 5.

 8.5. Size:131K  inchange semiconductor
2n6676 2n6677 2n6678.pdf

2N6676T3
2N6676T3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: KT819G-1

 

 
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