2N6676T3 Specs and Replacement
Type Designator: 2N6676T3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO257AA
2N6676T3 Substitution
- BJT ⓘ Cross-Reference Search
2N6676T3 datasheet
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf 
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2... See More ⇒
2n6676 2n6678 2n6691 2n6693.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE... See More ⇒
NPN High Power Silicon Transistors 2N6676 & 2N6678 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 8.0 Vdc Base Current IB 5.... See More ⇒
Detailed specifications: 2N6933, 2N6934, 2N6935, 2N6987U, 2N869AX, 2N869AXCSM, 2N869AXDCSM, 2N6676T1, BC549, 2N6678M3A, 2N6678T1, 2N6678T3, 2STBN15D100, 2STD1360, 2STD2360, 2STF1525, 2STF2280
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