2N6678T3 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6678T3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO257AA
2N6678T3 Transistor Equivalent Substitute - Cross-Reference Search
2N6678T3 Datasheet (PDF)
2n6676-t1-t3 2n6678-t1-t3 2n6691 2n6693.pdf
The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be completed by 13 February 2014. MIL-PRF-19500/538G 13 December 2013 SUPERSEDING MIL-PRF-19500/538F 10 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2
2n6678m3a.pdf
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A High Voltage, Fast Switching. Hermetic TO-254AA Isolated Metal Package. Ideally suited for PWM Regulators, Power Supplies and Converter Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 650V VCEX VBE = -1.5V Collector Emitt
2n6676 2n6678 2n6691 2n6693.pdf
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices Qualified Level JAN 2N6676 2N6678 2N6691 2N6693 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6676 2N6678 Unit 2N6691 2N6693 Collector-Emitter Voltage 300 400 Vdc VCEO Collector-Base Voltage 450 650 Vdc VCBO Collector-Base Voltage 450 650 Vdc VCEX Emitter-Base Voltage 8.0 Vdc VE
2n6676 2n6678.pdf
NPN High Power Silicon Transistors2N6676 & 2N6678Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N6676 2N6678 UnitsCollector - Emitter Voltage VCEO 300 400 VdcCollector - Base Voltage VCBO 450 650 VdcCollector - Base Voltage VCBX 450 650 VdcEmitter - Base Voltage VEBO 8.0 VdcBase Current IB 5.
2n6678.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Volt
2n6678.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N6678DESCRIPTIONHigh Voltage CapabilityFast Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching applications such as:Off-line power suppliesConverter circuitsPWM regulatorsABSOLUTE MAXIM
2n6676 2n6677 2n6678.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See F
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
