All Transistors. 2STW100 Datasheet

 

2STW100 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2STW100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO247

 2STW100 Transistor Equivalent Substitute - Cross-Reference Search

   

2STW100 Datasheet (PDF)

 ..1. Size:110K  st
2stw100 2stw200.pdf

2STW100
2STW100

2STW1002STW200Complementary power Darlington transistorsPreliminary dataFeatures Complementary NPN - PNP transistors Monolithic Darlington configurationApplications Audio power amplifier DC-AC converter 321 Low voltage DC motor drive General purpose switching applicationsTO-247DescriptionFigure 1. Internal schematic diagramsThe devices are man

 ..2. Size:200K  inchange semiconductor
2stw100.pdf

2STW100
2STW100

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2STW100DESCRIPTIONWith TO-3PN packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type 2STW200Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectro

 9.1. Size:150K  st
2stw1693.pdf

2STW100
2STW100

2STW1693High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured in Figure 1. Internal schematic diagramlow voltage planar technology using

 9.2. Size:169K  st
2stw1695.pdf

2STW100
2STW100

2STW1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schema

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2449

 

 
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