2STW100 PDF and Equivalents Search

 

2STW100 Specs and Replacement

Type Designator: 2STW100

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 130 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO247

 2STW100 Substitution

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2STW100 datasheet

 ..1. Size:110K  st

2stw100 2stw200.pdf pdf_icon

2STW100

2STW100 2STW200 Complementary power Darlington transistors Preliminary data Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter 3 2 1 Low voltage DC motor drive General purpose switching applications TO-247 Description Figure 1. Internal schematic diagrams The devices are man... See More ⇒

 ..2. Size:200K  inchange semiconductor

2stw100.pdf pdf_icon

2STW100

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STW100 DESCRIPTION With TO-3PN packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to Type 2STW200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electro... See More ⇒

 9.1. Size:150K  st

2stw1693.pdf pdf_icon

2STW100

2STW1693 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using... See More ⇒

 9.2. Size:169K  st

2stw1695.pdf pdf_icon

2STW100

2STW1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schema... See More ⇒

Detailed specifications: 2N6678T3, 2STBN15D100, 2STD1360, 2STD2360, 2STF1525, 2STF2280, 2STL1525, 2STN2340, 2SC828, 2STW200, 2SD2474, 2SD2625V9, BR3DD2625V9P, 2SD2625X9, BR3DD2625X9P, 2SD2625Z9, BR3DD2625Z9P

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