2SD2908 PDF and Equivalents Search

 

2SD2908 Specs and Replacement

Type Designator: 2SD2908

SMD Transistor Code: AHQ_AHR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

 2SD2908 Substitution

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2SD2908 datasheet

 ..1. Size:225K  bruckewell

2sd2908.pdf pdf_icon

2SD2908

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltag... See More ⇒

 8.1. Size:220K  inchange semiconductor

2sd2901.pdf pdf_icon

2SD2908

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 900V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

 9.1. Size:194K  inchange semiconductor

2sd299.pdf pdf_icon

2SD2908

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD299 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABS... See More ⇒

 9.2. Size:180K  inchange semiconductor

2sd291.pdf pdf_icon

2SD2908

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD291 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 18W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: 2SD2625V9 , BR3DD2625V9P , 2SD2625X9 , BR3DD2625X9P , 2SD2625Z9 , BR3DD2625Z9P , 2SD2656FRA , 2SD2657KFRA , BD333 , 2SD467C , 2SD667A-B , 2SD667A-C , 2SD667A-D , 2SD667-B , 2SD667-C , 2SD667-D , 2SD667L-B .

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