2SD667-D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD667-D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO92MOD
2SD667-D Transistor Equivalent Substitute - Cross-Reference Search
2SD667-D Datasheet (PDF)
2sd667a-b-c-d 2sd667-b-c-d.pdf
2SD667(A)-BMCCMicro Commercial ComponentsTM2SD667(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SD667(A)-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Capable of 0.9Watts of Power Dissipation.Pla
2sd667-2sd667a to-92mod.pdf
2SD667/2SD667A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features Low frequency power amplifier 5.8006.200 Complementary pair with 2SB647/A 8.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.8000.9001.100Symbol Parameter Value Units 0.400VCBO Collector- Base Voltage 120 V 0.600VCEO Collector-Emitter Voltage 2SD667 8
2sd667-2sd667a to-92l.pdf
2SD667/2SD667A TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low frequency power amplifier 8.200 Complementary pair with 2SB647/A 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Value Units0.55013.80014.200VCBO Collector- Base Voltage 120 V VCEO Collector-Emitter Vol
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 431 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: BC408 | 2SD2088 | OC81
