2SD602LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD602LT1
SMD Transistor Code: 1P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
2SD602LT1 Transistor Equivalent Substitute - Cross-Reference Search
2SD602LT1 Datasheet (PDF)
2sd602lt1.pdf
RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit1.1.GATECollector-Base Voltage Vcbo 75 V 2.SOURCER2.43.DRAIE1.3Collector-Emitter Voltage Vceo 40 V Emitter-Base V
2sd602 e.pdf
Transistor2SD602, 2SD602ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB710 and 2SB710A+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1pack
2sd602.pdf
Transistor2SD602, 2SD602ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB710 and 2SB710A+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1pack
2sd602,602a.pdf
2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) AL33Top ViewCLASSIFICATION OF hFE (1) C B11 2Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2K ERange 85~170 120~240 170~340 DMarking Code WQ
2sd602a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50
2sd602a.pdf
2SD602ATRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA PC Collector
2sd602.pdf
2SD602TRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA PC Collector P
2sd602.pdf
2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB710(BR3CG710M),2SB710A(BR3CG710AM)Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) / Applications General
2sd602a.pdf
SMD Type TransistorsNPN Transistors2SD602ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Low Collector to Emitter Saturation Voltage Mini Type Package1 2 Complimentary to 2SB710A+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
