2N6599 Specs and Replacement
Type Designator: 2N6599
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.075 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO33-1
2N6599 Substitution
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2N6599 datasheet
A Boca Semiconductor Corp http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com ... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings... See More ⇒
Detailed specifications: 2N6591, 2N6592, 2N6593, 2N6594, 2N6595, 2N6596, 2N6597, 2N6598, TIP120, 2N66, 2N660, 2N6600, 2N6601, 2N6602, 2N6603, 2N6604, 2N6609
Keywords - 2N6599 pdf specs
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