PMC3358 Specs and Replacement
Type Designator: PMC3358
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 70 °C
Electrical Characteristics
Transition Frequency (ft): 6000 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT37
PMC3358 Substitution
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PMC3358 datasheet
PMC3358 NPN SILICON HIGH-FREQUENCY TRANSISTOR designed for low noise amplifier at VHF, UHF and CATV band. MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Collector power Dissipation Ptot 250 mW 1 Base Junction Temperature TjMAX 150 ... See More ⇒
PMC3356 NPN SILICON EPITAXIAL TRANSISTOR designed for low noise amplifier at VHF, UHF and CATV band. SOT-23 MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA 1 Base Total Power Dissipation Ptot 200 mW 2 Emitter Junction Temperat... See More ⇒
Detailed specifications: 2SC1008-G, 2SC1008-O, 2SC1008-R, 2SC1008-Y, 2SC1074S, 2SC1074S-TO3, PMC3281, PMC3356, A1013, PMC3907, PMC4106, PXT8050-C, PXT8050-D, PXT8050-D3, PXT8550-B, PXT8550-C, PXT8550-D
Keywords - PMC3358 pdf specs
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History: 2SAB26N
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