All Transistors. PZT751T1G Datasheet

 

PZT751T1G Datasheet and Replacement


   Type Designator: PZT751T1G
   SMD Transistor Code: ZT751
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223
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PZT751T1G Datasheet (PDF)

 ..1. Size:62K  onsemi
 pzt751t1g.pdf pdf_icon

PZT751T1G

PZT751PNP Silicon PlanarEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.FeaturesSOT-223 PACKAGE HIGH CURRENT High CurrentNPN SILICON TRANSISTOR The SOT-223 Package can be soldered

 6.1. Size:119K  motorola
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PZT751T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZT751T1/DPZT751T1PNP Silicon PlanarMotorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in industrial and consumerSOT223 PACKAGEapplications. The device is housed in the SOT223 package which is designed forHIGH CURRENTmedium power surface mount applications.

 6.2. Size:175K  onsemi
 pzt751t1.pdf pdf_icon

PZT751T1G

DATA SHEETwww.onsemi.comPNP Silicon Planar SOT-223 PACKAGE HIGH CURRENTNPN SILICON TRANSISTOREpitaxial TransistorSURFACE MOUNTPZT751T1This PNP Silicon Epitaxial transistor is designed for use in4industrial and consumer applications. The device is housed in the1SOT-223 package which is designed for medium power surface23mount applications.SOT-223CASE 318EFeature

 8.1. Size:59K  onsemi
 pzt751.pdf pdf_icon

PZT751T1G

PZT751PNP Silicon PlanarEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.FeaturesSOT-223 PACKAGE HIGH CURRENT High CurrentNPN SILICON TRANSISTOR The SOT-223 Package can be soldered

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