2N660 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N660
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 11 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO5
2N660 Transistor Equivalent Substitute - Cross-Reference Search
2N660 Datasheet (PDF)
2n3773 2n6609.pdf
Order this documentMOTOROLAby 2N3773/DSEMICONDUCTOR TECHNICAL DATANPN2N3773*Complementary Silicon PowerPNP2N6609TransistorsThe 2N3773 and 2N6609 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. These devices canalso be used in power switching circuits such as relay or solenoid d
2n3773 2n6609.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n3773 2n6609.pdf
NPN 2N3773*, PNP 2N6609Preferred DeviceComplementary SiliconPower TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switchinghttp://onsemi.comcircuits such as relay or solenoid drivers, DC-DC converters orinverters.16 A COMPLEMENTARYFeat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
