All Transistors. 2N6601 Datasheet

 

2N6601 Datasheet and Replacement


   Type Designator: 2N6601
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO33-1
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2N6601 Datasheet (PDF)

 9.1. Size:205K  motorola
 2n3773 2n6609.pdf pdf_icon

2N6601

Order this documentMOTOROLAby 2N3773/DSEMICONDUCTOR TECHNICAL DATANPN2N3773*Complementary Silicon PowerPNP2N6609TransistorsThe 2N3773 and 2N6609 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. These devices canalso be used in power switching circuits such as relay or solenoid d

 9.2. Size:80K  central
 2n3773 2n6609.pdf pdf_icon

2N6601

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.3. Size:93K  onsemi
 2n3773 2n6609.pdf pdf_icon

2N6601

NPN 2N3773*, PNP 2N6609Preferred DeviceComplementary SiliconPower TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switchinghttp://onsemi.comcircuits such as relay or solenoid drivers, DC-DC converters orinverters.16 A COMPLEMENTARYFeat

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3267BL | 2N3060 | 2N5811 | BT2944 | CTP3551 | 2N1987 | 2N6602

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