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2N6601 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6601
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1000 MHz
   Capacitancia de salida (Cc): 1.2 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO33-1

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2N6601 Datasheet (PDF)

 9.1. Size:205K  motorola
 2n3773 2n6609.pdf pdf_icon

2N6601

Order this document MOTOROLA by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power PNP 2N6609 Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high *Motorola Preferred Device power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid d

 9.2. Size:80K  central
 2n3773 2n6609.pdf pdf_icon

2N6601

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 9.3. Size:93K  onsemi
 2n3773 2n6609.pdf pdf_icon

2N6601

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http //onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Feat

Otros transistores... 2N6595 , 2N6596 , 2N6597 , 2N6598 , 2N6599 , 2N66 , 2N660 , 2N6600 , BD333 , 2N6602 , 2N6603 , 2N6604 , 2N6609 , 2N661 , 2N6617 , 2N6618 , 2N6619 .

History: IMB11AFRA | IMX8FRA | CHEMT1GP | NSP602 | 2SD786 | CHT32CZGP | MPS2716

 

 
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