SUM201MN Datasheet and Replacement
Type Designator: SUM201MN
SMD Transistor Code: SUM201
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.64 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 42 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: DFN3X3
SUM201MN Substitution
SUM201MN Datasheet (PDF)
sum201mn.pdf

SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
sum201mn.pdf

SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
sum202mn.pdf

SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET
Datasheet: QSZ4 , R13003F1 , SS8050-C , SS8050-D , SS8050G , SS8550-C , SS8550-D , SS8550G , 2N2222 , SVT6062 , WTMA94 , WTP772 , WW263 , WW264 , YZ21F , FHD21F , ZT284CSM .
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History: 2SA893AC | 2G396



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