SUM201MN
Datasheet, Equivalent, Cross Reference Search
Type Designator: SUM201MN
SMD Transistor Code: SUM201
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.64
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 180
MHz
Collector Capacitance (Cc): 42
pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package:
DFN3X3
SUM201MN
Transistor Equivalent Substitute - Cross-Reference Search
SUM201MN
Datasheet (PDF)
..1. Size:418K auk
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
..2. Size:427K kodenshi
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
9.1. Size:369K auk
sum202mn.pdf
SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
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.