All Transistors. SPT5008M Datasheet

 

SPT5008M Datasheet and Replacement


   Type Designator: SPT5008M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 275 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO254
 

 SPT5008M Substitution

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SPT5008M Datasheet (PDF)

 7.1. Size:76K  ssdi
 spt5006 spt5008.pdf pdf_icon

SPT5008M

SPT5006 and SPT5008 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS DESIGNERS DATA SHEET 100 Volts Part Number / Ordering Information 1/ High Power - High Speed SPT5006 __ __ __ NPN Transistors SPT5008 __ __ __ Screening 2/ __ = Not

 9.1. Size:5480K  cn sps
 spt50n65f1a1t8tl.pdf pdf_icon

SPT5008M

SPT50N65F1A1T8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

 9.2. Size:5494K  cn sps
 spt50n65f1at8tl.pdf pdf_icon

SPT5008M

SPT50N65F1AT8TL650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.8 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 9.3. Size:1793K  cn sptech
 spt50n65f1a1.pdf pdf_icon

SPT5008M

SPT50N65F1A1 650V /50A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 50 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =50A 1.65 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

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Datasheet: SMA6080 , SMA6511 , SPT5006-3 , SPT5006-61 , SPT5006M , SPT5006S1 , SPT5008-3 , SPT5008-61 , BC556 , SPT5008S1 , SPT5330 , MBT35200MT1 , SMBT35200MT1G , MBT3904DW1T1G , MBT3904DW2T1G , SMBT3904DW1T1G , MBT3906DW1T1G .

Keywords - SPT5008M transistor datasheet

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