SMLBFY90 Datasheet, Equivalent, Cross Reference Search
Type Designator: SMLBFY90
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO72
SMLBFY90 Transistor Equivalent Substitute - Cross-Reference Search
SMLBFY90 Datasheet (PDF)
smlbfy90.pdf
SILICON PLANAR EPITAXIAL NPN Semelab LimitedTRANSISTORSMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VCBO Collector - Base Voltage 30VVCER Collector - Emitter Voltage (RBE 50) 30VVCEO Collector - Emitter Voltage 15VVEBO Emitter - Base Voltage 2.5VIC(AV) Average
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC2475 | DMC5610E | 2SD1618U
History: 2SC2475 | DMC5610E | 2SD1618U
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