SMLBFY90 Datasheet. Specs and Replacement
Type Designator: SMLBFY90 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
SMLBFY90 Substitution
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SMLBFY90 datasheet
SILICON PLANAR EPITAXIAL NPN Semelab Limited TRANSISTOR SMLBFY90 LOW NOISE TRANSISTOR FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector - Base Voltage 30V VCER Collector - Emitter Voltage (RBE 50 ) 30V VCEO Collector - Emitter Voltage 15V VEBO Emitter - Base Voltage 2.5V IC(AV) Average ... See More ⇒
Detailed specifications: MBT3946DW1T1G, SMBT3946DW1T1G, SML4017, SML4017A, SML5321, SML7A12, SMLA42CSM, SMLA42DCSM, 2SC828, 2SD1857A, 2SD1898-P, 2SD1898-Q, 2SD1898-R, 2SD1899-K, 2SD1899-L, 2SD1899-M, 2SD1899-Z
Keywords - SMLBFY90 pdf specs
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History: KA4A4L | SMBT3906S | KA4A4M | KA4F4N | SMBT3906DW1T1G
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