BU406A8 Datasheet. Specs and Replacement

Type Designator: BU406A8  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220AB

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BU406A8 datasheet

 ..1. Size:151K  crhj

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BU406A8

NPN R BU406 A8 BU406 A8 NPN VCEO 100 V IC 7 A Ptot TC=25 60 W ... See More ⇒

 8.1. Size:504K  feihonltd

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BU406A8

TRANSISTOR BU406A MAIN CHARACTERISTICS FEATURES Epitaxial silicon IC 7A VCEO 200V High switching speed High current capability PC 60W RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform ... See More ⇒

 9.1. Size:100K  motorola

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BU406A8

Order this document MOTOROLA by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV s and CRT s. 7 AMPERES NPN SILICON High Voltage VCEV = 330 or 400 V POWER TRANSISTORS Fast Switching Speed tf = 750 ns (max) ... See More ⇒

 9.2. Size:66K  st

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BU406A8

BU406D BU407D SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 2 1 TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for us... See More ⇒

Detailed specifications: 2SD1584-Z, 2SD1781KFRA, 2SD1781KGP, 2SD1782KFRA, 2SD1664GP, 2SD1664P, 2SD1664Q, 2SD1664R, C1815, BU508B, BU508C, BU941A, BU941B, BU941ZTFP, BULD118D-1, BULD39DT4, BULK128D-B

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