BUL64B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL64B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO251
BUL64B Transistor Equivalent Substitute - Cross-Reference Search
BUL64B Datasheet (PDF)
bul64b.pdf
BUL64BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mm (inches)HIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252) HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)SILICON POWER TRANSISTOR5.46 (0.215) 0.94 (0.037)1.09 (0.043)1.30 (0.051)Designed for use in electronic ballast applications5.97 (0.235)6.22 (0.245)1 2 3 SEMEFAB DESI
bul642d2.pdf
BUL642D2High Speed, High GainBipolar NPN Transistor withIntegratedCollector-Emitter andhttp://onsemi.comBuilt-in EfficientAntisaturation Network3 AMPERES825 VOLTSThe BUL642D2 is a state-of-the-art High Speed High GainBipolar Transistor (H2BIP). Tight dynamic characteristics and lot to75 WATTSlot minimum spread (150 ns on storage time) make it ideally suitablePOWER TR
bul64a.pdf
BUL64ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mm (inches)HIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252) HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)SILICON POWER TRANSISTOR5.46 (0.215) 0.94 (0.037)1.09 (0.043)1.30 (0.051)Designed for use in electronic ballast applications5.97 (0.235)6.22 (0.245)1 2 3 SEMEFAB DESI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: M8124
