BUL64B PDF and Equivalents Search

BUL64B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI... See More ⇒

BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector-Emitter and http //onsemi.com Built-in Efficient Antisaturation Network 3 AMPERES 825 VOLTS The BUL642D2 is a state-of-the-art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to 75 WATTS lot minimum spread (150 ns on storage time) make it ideally suitable POWER TR... See More ⇒

BUL64A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm (inches) HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) SILICON POWER TRANSISTOR 5.46 (0.215) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 SEMEFAB DESI... See More ⇒