BUL66A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL66A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO251
BUL66A Transistor Equivalent Substitute - Cross-Reference Search
BUL66A Datasheet (PDF)
bul66a.pdf
BUL66ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
bul66b.pdf
BUL66BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
