BUL54A-T257F Datasheet. Specs and Replacement

Type Designator: BUL54A-T257F  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 500 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO257F

 BUL54A-T257F Substitution

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BUL54A-T257F datasheet

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BUL54A-T257F

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BUL54A-T257F

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BUL54A-T257F

BUL54A SM SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE 11.5 2.0 0.25 HIGH VOLTAGE 3.5 3.5 3.0 FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 1 3 HIGH ENERGY RATING EFFICIENT POWER SWITCHING 2 MILITARY AND HI REL... See More ⇒

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BUL54A-T257F

BUL54ASMD ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATING E... See More ⇒

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Detailed specifications: BUL72B, BUL52ASMD, BUL52BSMD, BUL53ASMD, BUL53B-SM, BUL53BSMD, BUL54A-SM, BUL54ASMD, 2SD2499, BUL54A-TO5, BUL54BSMD, TIP36CP, BUL5555, BUL55ASMD, BUL55BSMD, BUL56ASMD, BUL56BSMD

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