BUL58ASMD Datasheet and Replacement

BUL58ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 160V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

BUL58DHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 FULLY CHARACTERISED AT 125oC 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLELTO-220COL

BUL58BSMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGEFAST SWITCHINGHIGH ENERGY RATING FEATURES Multibase for efficient energy distributiona