KC556 Datasheet. Specs and Replacement
Type Designator: KC556 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.63 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 280 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
KC556 Substitution
- BJT ⓘ Cross-Reference Search
KC556 datasheet
DIP Type Transistors PNP Transistors BC556 BC558 (KC556 KC558) Unit mm TO-92 4.8 0.3 3.8 0.3 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V 0.60 Max 0.45 0.1 0.5 COLLECTOR 1 2 1 3 2 1.Collector BASE 2.Base 1.27 3.Emitter 2.54 3 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol BC556 ... See More ⇒
Detailed specifications: KA4L3N, KA4L3Z, KA4L4K, KA4L4L, KA4L4M, KA4L4Z, KC327, KC337, 431, KC557, KC558, KC807, KC807A, KC807W, KC808, KC808A, KC817-16
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