KC817-40 Datasheet. Specs and Replacement
Type Designator: KC817-40 📄📄
SMD Transistor Code: 6C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: SOT23
KC817-40 Substitution
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KC817-40 datasheet
SMD Type Transistors NPN Transistors BC817 HF (KC817 HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 For general AF applications Low collector-emitter saturation voltage Complementary types BC807 HF ( PNP ) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra... See More ⇒
SMD Type Transistors NPN Transistors BC817A (KC817A) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 For general AF applications. High collector current. 1 2 High current gain. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector... See More ⇒
SMD Type Transistors NPN Transistors BC817W (KC817W) Features For General AF Applications High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage Complementary to BC807W 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt... See More ⇒
Detailed specifications: KC558, KC807, KC807A, KC807W, KC808, KC808A, KC817-16, KC817-25, BD333, KC817A-16, KC817A-25, KC817A-40, KC817W-16, KC817W-25, KC817W-40, KC818-16, KC818-25
Keywords - KC817-40 pdf specs
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History: 2SC1917 | 2SD985 | MP503 | PBSS9110D
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